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| SMD Type NPN Epitaxial Silicon Transistor MJD47;MJD50 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Straight Lead +0.1 0.80-0.1 +0.15 0.50 -0.15 Load Formed for Surface Mount Application +0.2 9.70 -0.2 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Emitter Voltage MJD47 MJD50 Collector-Emitter Voltage MJD47 MJD50 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25 ) Collector Dissipation (Ta=25 ) Junction Temperature Storage Temperature TJ TSTG VEBO IC ICP IB PC VCEO Symbol VCBO Rating 350 500 250 400 5 1 2 0.6 15 1.56 150 -65 to 150 Unit V V V V V A A A W W Electrical Characteristics Ta = 25 unless otherwise noted Parameter Collector-Emitter Sustaining Voltage * MJD47 MJD50 Collector Cut-off Current MJD47 MJD50 Collector Cut-off Current MJD47 MJD50 Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product *Pulse Test: PW 300is, Duty Cycle 2% IEBO hFE VCE(sat) VBE(sat) fT ICES ICEO VCE = 150V, IB = 0 VCE = 300V, IB = 0 VCE = 350, VEB = 0 VCE = 500, VEB = 0 VBE = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10A, IC = 1A VCE =10V, IC = 0.2A 10 30 10 1 1.5 V V MHz Symbol VCEO(sus) Testconditons IC = 30mA, IB = 0 Min 250 400 0.2 0.2 0.1 0.1 1 150 Typ Max Unit V V mA mA mA mA mA 3.80 Features www.kexin.com.cn 1 |
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